廖蕾
博士，男，1981年10月出生
湖南大学半导体学院（集成电路学院）院长，教授
主要开展高性能纳电子器件的研究
Email: liaolei@whu.edu.cn; liaolei@hnu.edu.cn;
1）教育经历
·2000年-2004年 武汉大学物理学院 本科
·2004年-2009年 武汉大学物理学院硕博连读，导师：李金钗教授
·2005年-2007年 中国科学院物理所 联合培养，导师：王恩哥教授
2）工作经历
·2017年-现在 湖南大学物理与微电子科学学院 教授
·2011年-2016年武汉大学物理学院 教授
·2009年-2011年加州大学洛杉矶分校 博士后，导师：段镶锋教授
·2007年-2009年南洋理工大学 千禧研究员 导师：申泽襄/于霆 教授
3）获奖及荣誉
湖北省自然科学一等奖 (2012/2021)排名第二
湖南省青年科技奖 (2021)
爱思唯尔中国高被引学者 (2021)
科睿唯安全球高被引学者 (2018/2020/2022)
国家自然科学基金杰出青年项目 (2019)
湖南省湖湘青年英才 (2017)
中国侨联贡献奖 (2016)
中组部青年拔尖人才计划 (2015)
国家自然科学基金优秀青年项目 (2012)
4）项目资助情况
Fellowship of the Institution of Engineering and Technology (IET)
SID（国际信息显示协会）北京分会专业技术委员会委员
Senior Member of IEEE
Frontier of Physics副主编
Chinese Physics Letters和Journal of Semiconductors编委会成员
主持国家重点研发计划课题，国家自然科学基金杰出青年项目和重点项目和湖南省创新群体项目等，作为骨干参加科技部重点基础研究发展计划、重点研发计划和国家重大专项。
5）论文和专利
在Nature、Nature Electron.、Nature Mater.和Nature Commun.等学术期刊发表SCI论文200多篇，所有论文SCI他引超过16000次，H因子75，授权中国发明专利7项。
6）代表论文列表(总他引Citation > 16000, H =75)
1.Luo P. F., Liu C., Lin J., Duan X. P., Zhang W. J., Ma C., Lv Y. W., Zou X. M., Liu Y., Schwierz F., Qin W. J.,Liao L.*, He J.*, Liu X. Q.*,Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation,Nature ElectronicsDOI:10.1038/s41928-022-00877-w
2.Liu C.; Ding S. M.; Tian Q. L.; Hong X. T.; Su W. H.; Tang L.; Wang L. M.; Zhang M. L.; Liu X. Q.; Lv Y.W.; Ho J. C.*;Liao L.*;Zou X. M.*, Realizing the switching of optoelectronic memory and ultrafast detector in functionalized-black phosphorus/MoS2 heterojunction,Laser & Photonics ReviewsDOI:10.1002/lpor.202200486
3.Tian Q. L.; Hong R. H.; Liu C.; Hong X. T.; Zhang S.; Wang L. M.; Lv Y. W.; Liu X. Q.;Zou X. M.*;Liao L.*,Flexible SnO Optoelectronic Memory Based on Light-Dependent Ionic Migration in Ruddlesden-Popper Perovskite.Nano Letters2022, 22 (1), 494-500.
4.Hong, R. H.; Tian, QJ. Y. Jiang, X. M. Zou,* Y. W. Lv, Y. Liu, W. T. Xu, Q. Y. Tao, Y. Chai, andL. Liao*Rational Design of Al2O3/2D Perovskite Heterostructure Dielectric for High Performance MoS2PhototransistorsNature Commun.11, 4266, (2020)
5.D. Wan, B. Jiang, H. Huang, C. Chen, A. Abliz, C. Ye, X. Q. Liu, X. M. Zou, G. L. Li, D. Flandre, andL. Liao*High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local DopingIEEE Electron Device Lett.41, 944, (2020)
6.S. L. Wei, F. Wang, X. M. Zou,* L. M. Wang, C. Liu, X. Q. Liu, W. D. Hu, Z. Y. Fan, J. C. Ho,* andL. Liao*Flexible Quasi-2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband PhotodetectionAdv. Mater.32, 1907527, (2020)
7.Z. D. Xie, Y. F. Liu*, andL. Liao*Ultrathin Dielectrics for 2D DevicesNature Electron.2, 559, (2019)
8.L .M Wang, X. M. Zou,* J. Lin, J. Y. Jiang, Y. Liu, X. Q. Liu, X. Zhao, Y. F. Liu,* J. C. Ho, andL. Liao*Perovskite/Black Phosphorus/MoS2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast ResponseACS Nano13, 4804, (2019)
9.Z. P. Dou, Z. L. Chen, N. Li, S. Y. Yang,* Z. W. Yu, Y. W. Sun, Y. H. Li, B. Y. Liu, Q. Luo, T. B. Ma,L. Liao,*Z. F. Liu, and P. Gao* Atomic mechanism of strong interactions at the graphene/sapphire interfaceNature Commun.10, 5013, (2019)
10.C. Wang, Q. Y. He, U. Halim, Y. Y. Liu, E. B. Zhu, Z. Y. Lin, H. Xiao, X. D. Duan, Z. Y. Feng, R. Cheng, N. O. Weiss, G. J. Ye, Y. C. Huang, H. Wu, H. C. Cheng, I. Shakir,L. Liao,*X. H. Chen, W. A. Goddard III, Y. Huang,* X. F. Duan* Monolayer atomic crystal molecular superlatticesNature555, 231,(2018)
11.Z. Y. Yang, X. Q. Liu, X. M. Zou, J. L. Wang, C. Ma, C. Z. Jiang, J. C. Ho, C. F. Pan, X. H. Xiao*, J. Xiong*,L. Liao*Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2TransistorsAdv. Funct. Mater.27, 1602250, (2017)
12.J. L. Wang, Q. Yao, C. W. Huang, X. M. Zou,L. Liao*,S. S. Chen, Z. Y. Fan, K. Zhang, W. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu High Mobility MoS2Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling LayerAdv. Mater.28, 8302, (2016).
13.J. L. Wang, X. M. Zou, X. H. Xiao, L. Xu, C. L. Wang, C. Z. Jiang, J. C. Ho*, T. Wang, J. C. Li,L. Liao*Floating Gate Memory based Monolayer MoS2 Transistor with Metal Nanocrystals embedded in Gate Dielectrics.Small11, 208, (2015)
14.X. Q. Liu, X. Liu, J. L. Wang, C. N. Liao, X. H. Xiao, S. S. Guo, C. Z. Jiang, Z. Y. Fan, T. Wang, X. S. Chen, W. Lu, W. D. Hu*,L. Liao*Transparent, High-Performance InGaZnO/Aligned-SnO2Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors.Adv. Mater. 26, 7399, (2014)
15.X. M. Zou, J. L. Wang, C. H. Chiu, Y. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu, L. Q. Mai, T. S. Chen, J. C. Li, J. C. Ho*,L. Liao*, Interface Engineering for High-Performance Top-Gated MoS2Field Effect Transistors.Adv. Mater.26, 6255, (2014)
16.X. M. Zou, J. L. Wang, X. Q. Liu, C. L. Wang, Y. Jiang, Y. Wang, X. H. Xiao, J. C. Ho*, J. C. Li, C. Z. Jiang, Y. Fang,L. Liao*,Rational Design of Sub-ppm Specific Gas Sensors Array based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors Nano Lett.13, 3287, (2013)
17.X. Q. Liu, C. L. Wang, B. Cai, X. H. Xiao, S. S. Guo, Z. Y. Fan*, J. C. Li, X. F. Duan,L. Liao*, Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotubes Hybrid Film for Unique Performance TransistorNano Lett.12, 3596, (2012).
18.L. Liao,J. W. Bai, R. Chen, H. L. Zhou, L. X. Liu, Y. Liu, Y. Huang, X. F. Duan, Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on GlassNano Lett.12, 2653, (2012).
19.L. Liao, Y. C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K..L. Wang, Y. Huang, X. F. Duan High speed graphene transistors with a self-aligned nanowire gateNature467, 305, (2010)
20.L. Liao, J. W. Bai, Y. Q. Qu, Y. C. Lin, Y. J. Li, Y. Huang, and X. F. Duan High-k Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene TransistorsPNAS107, 6711 (2010).
