Microelectronics and CMOS Scaling Seminar

报告题目：Past, Present, and Future of CMOS Scaling

报告人：Frank Schwierz

报告时间：2022年12月2日15:00-16:00

腾讯会议号：504-324-992

联系人：廖蕾

报告摘要：

For decades, CMOS scaling has been the key driving force in digital electronics. While scaling has always been demanding, recently more and more people in the electronics community express concerns about a slowing down of CMOS scaling and about its quickly approaching end. On the other hand, chipmakers still proceed with scaling and a lot of processing innovations and novel new transistor architectures are explored. In the present talk, we walk through more than five decades of CMOS scaling. Our discussion starts with Dennard’s scaling rules elaborated in the early 1970s at IBM and proceeds all the way to some major achievements from the recent past. Here, exemplarily we discourse about (i) the demonstration of stacked nMOSFETs-on-pMOSFETs reported by Intel engineers at IEDM 2020, (ii) the announcement of IBM’s 2-nm technology in May 2021, and (iii) the demonstration of stacked MOSFETs with MoS₂and WSe₂channels reported by researchers from Peking University and Huazhong University at IEDM 2021. We discuss the four stages of scaling, i.e., (i) traditional scaling and (ii) equivalent scaling of conventional single-gate MOSFETs, (iii) FinFET scaling, and (iv)scaling of gate-all-around stacked nanosheet channel FETs. Moreover, important trends in digital CMOS are analyzed and beyond-CMOS solutions for information processing are highlighted.

个人简历：

Frank Schwierz received the Dr.-Ing. and Dr. habil. degrees from Technische Universität (TU) Ilmenau, Germany, in 1986 and 2003, respectively. Presently he serves as Privatdozent at the Micro- and Nanoelectronic Systems Department of TU Ilmenau and his research is focused on novel device and material concepts for future electronics.Dr. Schwierz has been conducting research projects funded by the European Community, German government agencies, and the industry. Together with partners from academia and industry, he was involved in the development of the fastest Si-basedtransistors worldwide in the late 1990s, of Europe's smallest MOSFETs in the early 2000s, as well as of the fastest GaN HEMTs on Si and the fastest GaN tri-gate HEMTs worldwide in the 2010s. His work on two-dimensional materials made a major contribution to the current understanding of the merits and drawbacks of graphene and beyond graphene 2D transistors.

Dr. Schwierz has published 300 journal and conference papers including 50 invited/keynote papers. He is author of the books Modern Microwave Transistors – Theory, Design, andPerformance (J. Wiley & Sons 2003) and Nanometer CMOS (Pan Stanford Publishing 2010) and editor of the book Two-Dimensional Electronics – Prospects and Challenges (MDPI 2016).

Dr. Schwierz is a Senior Member of the IEEE. He serves as committee member of international conferences (most notably IEDM 2018 and 2019), as a Distinguished Lecturer of the IEEE Electron Devices Society, and as an editor of the IEEE Transactions on Electron Devices. Moreover, he was one of the key contributors to the Emerging Research Devices Technology Working Groups of the 2013 and 2015 ITRS (International Technology Roadmap for Semiconductors) editions.

报告题目：Microelectronics: Current Status, Outlook, and Reliability Issues

报告人：Juin J. Liou, Ph.D.

报告时间：2022年12月2日16:00-17:00

腾讯会议号：504-324-992

联系人：廖蕾

报告摘要：

The industry of microelectronics is highly vital to the global economy. While the research and development of microelectronics has been very active and fruitful in the past 40 years, many new technologies have emerged recently which makes the microelectronics field evolving, challenging, and unpredictable in the foreseeable future. Aside from the various semiconductor processes and technologies, reliability is also a critical measure to the quality of microelectronic devices/circuits/systems, as no products can prevail in the markets without a high level of reliability.

An overview on the background, current status, and outlook of microelectronics will first be introduced in this talk. This is followed by the discussions of reliability issues for the current and emerging technologies.

个人简历：

Juin J. Liou received the B.S. (honors), M.S., and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively. In 1987, he joined the Department of Electrical and Computer Engineering at the University of Central Florida (UCF), Orlando, Florida where he held the positions of Pegasus Distinguished Professor, Lockheed Martin St. Laurent Professor, and UCF-Analog Devices Fellow. Dr. Liou’s research interests are electrostatic discharge (ESD) protection design, modeling and simulation, and characterization.

Dr. Liou holds 18 patents and has published 13 books, more than 350 journal papers (including 22 invited review articles), and more than 260 papers (including more than 120 keynote and invited papers) in international and national conference proceedings. He has been awarded more than $14.0 million of research contracts and grants from federal agencies (i.e., NSF, DARPA, Navy, Air Force, NASA, NIST), state government, and industry (i.e., Semiconductor Research Corp., Intel Corp., Intersil Corp., Lucent Technologies, Alcatel Space, Conexant Systems, Texas Instruments, Fairchild Semiconductor, National Semiconductor, Analog Devices, Maxim Integrated Systems, Allegro Microsystems, RF Micro Device, Lockheed Martin), and has held consulting positions with research laboratories and companies in the United States, China, Japan, Taiwan, and Singapore. In addition, Dr. Liou has served as a technical reviewer for various journals and publishers, general chair or technical program chair for a large number of international conferences, regional editor (in USA, Canada and South America) of the Microelectronics Reliability journal, and guest editor of 7 special issues in the IEEE Journal of Emerging and Selected Topics in Circuits and Systems, Microelectronics Reliability, Solid-State Electronics, World Scientific Journal, and International Journal of Antennas and Propagation.

Dr. Liou received ten different awards on excellence in teaching and research from the University of Central Florida (UCF) and six different awards from the IEEE. Among them, he was awarded the UCF Pegasus Distinguished Professor (2009) – the highest honor bestowed to a faculty member at UCF, UCF Distinguished Researcher Award (four times: 1992, 1998, 2002,, UCF Research Incentive Award (four times: 2000, 2005, 2010, 2015), IEEE Joseph M. Biedenbach Outstanding Engineering Educator Award in 2004 for exemplary engineering teaching, research, and international collaboration, and IEEE Electron Devices Society Education Award in 2014 for promoting and inspiring global education and learning in the field of electron devices. His other honors are Fellow of IEEE, Fellow of IET, Fellow of AAIA, Fellow of Singapore Institute of Manufacturing Technology, Fellow of UCF-Analog Devices, Distinguished Lecturer of IEEE Electron Device Society (EDS), and Distinguished Lecturer of National Science Council. He holds several honorary professorships, including the Chang Jiang Scholar Endowed Professor of Ministry of Education, China – the highest honorary professorship in China.

Dr. Liou had served as the IEEE EDS Vice-President of Regions/Chapters, IEEE EDS Treasurer, IEEE EDS Finance Committee Chair, Member of IEEE EDS Board of Governors, and Member of IEEE EDS Educational Activities Committee.