廖蕾
博士，男
湖南大学半导体学院（集成电路学院）院长，教授
主要开展微纳电子器件的研究
Email: liaolei@whu.edu.cn;liaolei@hnu.edu.cn;
1）教育经历
2）工作经历
2022-现在 湖南大学半导体学院（集成电路学院）教授
2017年-2021年湖南大学物理与微电子科学学院教授
2011年-2016年武汉大学物理学院教授
2009年-2011年加州大学洛杉矶分校博士后，导师：段镶锋 教授
2007年-2009年南洋理工大学千禧研究员导师：申泽襄/于霆 教授
3）获奖及荣誉
湖南省自然科学一等奖(2023)排名第一
国际材料联合会青年科学家奖(2023)
教育部自然科学一等奖(2022)排名第二
湖北省自然科学一等奖 (2012/2021)排名第二
湖南省青年科技奖 (2021)
爱思唯尔中国高被引学者(2021-2024)
科睿唯安全球高被引学者 (2018/2020/2022/2024)
国家自然科学基金JQ项目(2019)
湖南省湖湘青年英才(2017)
中国侨联贡献奖(2016)
中组部QB人才计划(2015)
国家自然科学基金YQ项目(2012)
4）兼职
IET (英国工程技术学会), IOP (英国物理学会) Fellow
IEEE Transaction on Electron Devices和Frontier of Physics副主编
Solid State Electronics, Chinese Physics Letters和Journal of Semiconductors编委
5）项目
主持国家重点研发“新型显示和战略性电子材料”重点专项、国家自然科学基金杰出青年项目、重点项目和区域联合重点项目等，参与国家自然科学基金委重大集成项目、重点研发计划、和科技部重大专项等国家重大重点项目十多项。
6）论文和专利
在Nature、Nature Electron.、Nature Nano.和Nature Commun.等学术期刊发表SCI论文300多篇，所有论文SCI他引超过25000次，H因子87，授权中国发明专利7项。
代表论文列表 (总他引Citation > 25000, H = 87)
二维半导体
1. Liu, C.; Tang, L.; Lv, Y. W.;* Chen, L.; Qin, Y. L.; Zhang, S.; Zhao, S. H.; Ding, S. M.; Zhang, X.; Xu, P.; Ma, C.; Liu, X. Q.; Wang, F.; Wang, P.; Wang X. D.; Liu, Y.; Wang, E. G.; Liao, L.;* Zou, X. M.;* Sub-pA dark current infrared photodetection enabled by polarized water-intercalated heterojunctions, Nature Commun. 2025, 16, 3821
2. Tao Q. Y.; Wu R. X.; Zou X. M.;* Chen Y.; Li W. Y.; Lu Z. Y.; Ma L. K.; Kong L. A.; Lu D. L.; Yang X. K.; Song W. J.; Li W.; Liu L. T.; Ding S. M.; Liu X.; Duan X. D.; Liao L.;* Liu Y.;* High-density vertical sidewall MoS2 transistors through T-shape vertical lamination, Nature Commun. 2024, 15, 5774
3. Liu C.; Zou X. M.;* Lv Y. W.; Liu X. Q.; Ma C.; Li K. L.; Liu Y.; Chai Y.; Liao L.;* He J.;* Controllable van der Waals gaps by water adsorption, Nature Nanotechnology 2024, 19, 448
4. Luo P. F., Liu C., Lin J., Duan X. P., Zhang W. J., Ma C., Lv Y. W., Zou X. M., Liu Y., Schwierz F., Qin W. J., Liao L.,* He J.,* Liu X. Q.,* Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation, Nature Electronics 2022, 5, 849
5. J. Y. Jiang, X. M. Zou,* Y. W. Lv, Y. Liu, W. T. Xu, Q. Y. Tao, Y. Chai,* and L. Liao* Rational Design of Al2O3/2D Perovskite Heterostructure Dielectric for High Performance MoS2 Phototransistors Nature Commun. 11, 4266, (2020)
6. L .M Wang, X. M. Zou,* J. Lin, J. Y. Jiang, Y. Liu, X. Q. Liu, X. Zhao, Y. F. Liu,* J. C. Ho, and L. Liao* Perovskite/Black Phosphorus/MoS2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response ACS Nano 13, 4804, (2019)
7. C. Wang, Q. Y. He, U. Halim, Y. Y. Liu, E. B. Zhu, Z. Y. Lin, H. Xiao, X. D. Duan, Z. Y. Feng, R. Cheng, N. O. Weiss, G. J. Ye, Y. C. Huang, H. Wu, H. C. Cheng, I. Shakir, L. Liao,* X. H. Chen, W. A. Goddard III, Y. Huang,* X. F. Duan* Monolayer atomic crystal molecular superlattices Nature 555, 231, (2018)
8. J. L. Wang, Q. Yao, C. W. Huang, X. M. Zou, L. Liao*, S. S. Chen, Z. Y. Fan, K. Zhang, W. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu High Mobility MoS2 Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling Layer Adv. Mater. 28, 8302, (2016).
9. X. M. Zou, J. L. Wang, C. H. Chiu, Y. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu, L. Q. Mai, T. S. Chen, J. C. Li, J. C. Ho*, L. Liao*, Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors. Adv. Mater. 26, 6255, (2014)
10. L. Liao, Y. C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K.. L. Wang, Y. Huang, X. F. Duan High speed graphene transistors with a self-aligned nanowire gate Nature 467, 305, (2010)
氧化物薄膜晶体管
1. R. H. Hong, H. Z. Liu, X. X. Xu, L. Tang, X. Yin, Q. L. Tian, M. Y. Cao, Y. R. Wang, B. X. Zhai, Y. Song, G. L. Li, J. P. Raskin, D. Flandre, W. Zhu, X. Q. Liu, X. M. Zou, L. M. Tang, P. H. He, L. Liao*, Transistors Enabled by Dopant-Induced Preferential Crystal Orientation towards Complementary Logic. Nano Lett. Accepted (2025).
2. J. Han, R. H. Hong, H. Z. Liu, W. C. Niu, X. Yin, L. Tang, S. Zhang, Y. Song, Y. Meng, P. H. He, H. Huang, L. M. Tang, X. Q Liu, X. M. Zou, L. Liao*, High-Mobility SnO Enabled by Doping-Induced Interstitial Oxygen for All-Oxide Complementary Logics. Adv. Funct. Mater. 35, 2500132, (2025).
3. R. H. Hong, P. H. He, S. Zhang, X. T. Hong, Q. L. Tian, C. Liu, T. Bu, W. H. Su, G. L. Li, D. Flandre, X. Q. Liu, Y. W. Lv, L. Liao*, X. M. Zou, Compositional Engineering of Cu-Doped SnO Film for Complementary Metal Oxide Semiconductor Technology. Nano Lett.24, 1176, (2024).
4. Tian Q. L.; Hong R. H.; Liu C.; Hong X. T.; Zhang S.; Wang L. M.; Lv Y. W.; Liu X. Q.; Zou X. M.*; Liao L.*, Flexible SnO Optoelectronic Memory Based on Light-Dependent Ionic Migration in Ruddlesden-Popper Perovskite. Nano Letters 2022, 22 (1), 494-500.
5. S. L. Wei, F. Wang, X. M. Zou,* L. M. Wang, C. Liu, X. Q. Liu, W. D. Hu, Z. Y. Fan, J. C. Ho,* and L. Liao* Flexible Quasi-2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection Adv. Mater. 32, 1907527, (2020)
6. X. Q. Liu, X. Liu, J. L. Wang, C. N. Liao, X. H. Xiao, S. S. Guo, C. Z. Jiang, Z. Y. Fan, T. Wang, X. S. Chen, W. Lu, W. D. Hu*, L. Liao* Transparent, High-Performance InGaZnO/Aligned-SnO2 Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors. Adv. Mater. 26, 7399, (2014)
7. X. Q. Liu, C. L. Wang, B. Cai, X. H. Xiao, S. S. Guo, Z. Y. Fan*, J. C. Li, X. F. Duan, L. Liao*, Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotubes Hybrid Film for Unique Performance Transistor. Nano Lett.12, 3596, (2012).
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